Sputter Deposition of ${\rm MoSi}_{2}$ Film as a Barrier for Nb-Based Josephson Junction

Recently, sputter-deposited ${\rm MoSi}_{2}$ films have been successfully used as a barrier material in ${\rm Nb}/{\rm MoSi}_{2}/{\rm Nb}$ Josephson junctions. In this report, we present our study on the deposition conditions of ${\rm MoSi}_{2}$ film for electronics application. We investigated the film stress and sheet resistance as a function of deposition conditions. We also studied the micro-structural change in the film according to the deposition conditions using electron microscopes. We suggest that the thermal strain need to be considered in order to get a reliable junction.