4H-SiC MESFET's with 42 GHz fmax

We report for the first time the development of state-of-the-art SiC MESFETs on high-resistivity 4H-SiC substrates. 0.5 μm gate MESFETs in this material show a new record high f
_max
of 42 GHz and RF gain of 5.1 dB at 20 GHz. These devices also show simultaneously high drain current, and gate-drain breakdown voltage of 500 mA/mm, and 100 V, respectively showing their potential for RF power applications.