/spl beta/-FeSi/sub 2/ formation on MOCVD Fe/Si(100) by solid phase epitaxy

In this paper we report for the first time the solid phase epitaxy of /spl beta/-FeSi/sub 2/ films using Fe/Si(100) heterostructures obtained by MOCVD. The formation process of the /spl beta/-FeSi/sub 2/ thin films involves the deposition of iron on Si(100) by MOCVD and subsequent annealing. The single-crystal structure of Fe film on Si(100) before annealing was revealed by X-ray diffraction and electron microscopy. After annealing, the synthesis of /spl beta/-FeSi/sub 2/ film is identified by X-ray diffraction.