Fabrication of ultra-small dimension Si/sub 1-x/Ge/sub x/ wires in Si using pulsed laser induced epitaxy

Direct writing of sub-micron Si/sub 1-x/Ge/sub x/ wires in Si is demonstrated for the first time using Pulsed Laser Induced Epitaxy (PLIE) and a photolithographic lift-off technique. The wire structures are analyzed by Secondary Electron Microscope (SEM), Atomic Force Microscope (AFM), Auger Electron Spectroscopy (AES), and cross-sectional Transmission Electron Microscopy (TEM). Side diffusion effects observed for the Ge are discussed. Potential applications of the wire structure include base formation in a lateral Si/sub 1-x/Ge/sub x/ bipolar transistor and direct formation of SiGe/Si quantum wire structures in a silicon chip.