A computer aided test system for the analysis of oxide trap relaxation spectroscopy of MOS device (OTRS CAT system)

When device dimension in current ICs is down to sub-micron realm, the oxide layer reliability under high field becomes more and more important in determining device lifetime. This CAT system is devised to test and analyze trap behaviour under high stress and thus evaluates the quality of oxide layer. Its intended users are industry field engineers and its main purpose is to be used in the degradation test after manufacture to determine potential damages that may caused by usage.