Accurate simulation on band-to-band tunneling induced leakage current using a global non-local model

In this work, a global non-local band-to-band tunneling (GBBT) model is introduced to take into account non-local tunneling effects between the two points across the potential barrier and also the tunneling contribution from all the nearby mesh cells with band-bending larger than the band-gap, This model has been implemented in a 2D device simulator UMDFET2 which is coupled with 2D process simulator TMA-SUPREM4. The model has been able to accurately and-consistently predict band-to-band tunneling (BBT) currents over a wide range of drain and gate voltages for different device structures without adjusting model parameters.