A 2.4-in. driver-integrated full-color quarter VGA (320/spl times/3/spl times/240) poly-Si TFT LCD by a novel low temperature process using a combination of ELA and RTA technology

A novel low temperature combination technology of ELA, which is used for the crystallization of a-Si, and RTA, which is used for both the activation of dopants and the silicidation of a polycide electrode, was developed. The poly-Si TFTs fabricated by this novel technology exhibit excellent characteristics (/spl mu/FE; 45 cm/sup 2/V/spl middot/s for n-ch, 20 cm/sup 2/V/spl middot/s for p-ch). Using this novel technology we have successfully fabricated a 2.4-in full color quarter VGA (320/spl times/3/spl times/240) poly-Si TFT LCD with fully integrated peripheral driving circuits.