Suppression of the parasitic bipolar effect in ultra-thin-film nMOSFETs/SIMOX by Ar ion implantation into source/drain regions

A new technique is described that can effectively suppress the parasitic bipolar action in ultra-thin-film nMOSFETs/SIMOX without body contacts. Recombination centers are created in the source and drain regions by deep Ar/sup +/ implantation and these centers increase the hole current flowing from the body into the source, thereby reducing the emitter efficiency of parasitic bipolar transistors. An Ar-implanted 0.25-/spl mu/m-gate nMOSFET/SIMOX exhibited excellent improvements in characteristics: reduction in off-leakage current of over two orders of magnitude and increase in drain-to-source breakdown voltage beyond 0.6 V.