A GaAs MMIC chip set for 1.9 GHz Japanese personal handy phone system

The GaAs MMIC chip set consisting of SPDT switch, low noise amplifier, power amplifier, AGC amplifier, up-converter and down converter has been developed to meet the specifications for a 1.9 GHz PHS front-end. The low noise amplifier and power amplifier achieve a noise figure of 2.2 dB and a power added efficiency of 30%, respectively. The SPDT switch employs a new circuit configuration with feedback capacitors, and achieved an output power at the 1dB compression point of 30 dBm. The up-converter employs single mixer, which suppresses local signal leakage to 29 dBc. The down-converter employs a single mixer using dual gate FET, to reduced DC power dissipation.