Effects of ion beam irradiation on electrical properties of Langmuir-Blodgett (LB) films

An RF (3-heptafluoropropyle) thiophene oligomer and a TCNQ complex with different molar ratios of the donor and acceptor were prepared as conductive materials by the Langmuir-Blodgett (LB) technique. A method utilizing ion beam irradiation for improving the quality and stability of the LB films was also proposed.