Quantum mechanical influences on short-channel effects in ultra-thin MOSFET/SIMOX devices

This paper describes an explicit manifestation of quantum-mechanical influences on the short channel effects (SCE) in the threshold voltage of ultra-thin buried-channel MOSFET/SIMOX devices. The theoretical model predicts an abnormal quantum mechanical SCE (QSCE) in extremely thin SOI layer. It also predicts that the QSCE becomes much salient at low temperatures, which is examined quantitatively by experiments.