Isolation process dependence of channel mobility in thin-film SOI devices

Degradation of NMOS and enhancement of PMOS I-V characteristics are found to be dependent on specific isolation processes in thin-film SOI devices. These variations are due to mobility decrease in NMOS and increase in PMOS, which can be attributed to the isolation-process-related compressive strain of the silicon film. Magnitudes of mobility variation as high as 40% are observed in the affected SOI devices.