Low temperature polycrystalline silicon thin film transistor with silicon nitride ion stopper

The authors have fabricated a new low temperature polycrystalline silicon (poly-Si) thin film transistor (TFT) with silicon nitride (SiN/sub x/) ion-stopper and laser annealed poly-Si. The fabricated poly-Si TFT using SiN/sub x/ as the ion-stopper as well as the gate insulator exhibited a field effect mobility of 110 cm
²
/Vs, subthreshold voltage of 5.5 V, subthreshold slope of 0.48 V/dec., and on/off current ratio of /spl sim/10
⁶
. Low off-state leakage current of 2.4×10/sup -2/ A/μm at the drain voltage of 5 V and the gate voltage of -5 V was achieved.