Negative-resistance characteristics of the micromachined thermistor sensor in CMOS-VLSI technology

The experimental and theoretical analyses to explain the origin of the negative-resistance characteristics of the isothermal doped poly-Si resistor of the micromachined sensor are presented in this paper. Based on the effect of self-heating of the resistor with cavity structure on the transportation of carriers across the grain-boundary barrier, the computed simulation results fit well with the experimental values.