Effects of processing fluctuations on a 0.1 /spl mu/m MOSFET

Fluctuations in the processing parameters can lead to a separation between the gate and the source/drain extensions in MOSFETs. A 0.1 /spl mu/m MOSFET was simulated with 5%, and 10% separation and it was found that the transconductance was reduced, the threshold voltage was not significantly changed, and that there was no effect on the breakdown because the device has suffered punchthrough rather than avalanche breakdown.