Photovoltaic characteristics of CuInS/sub 2//CdS heterojunction

CuInS/sub 2//CdS heterojunction has been fabricated by depositing CdS thin film with dopant In on ternary compound CuInS/sub 2/ thin film. Its best conversion efficiency was 5.66% under the illumination of 100 mW/cm/sup 2/, and its series resistance and lattice mismatch was 5.1 /spl Omega/ and 3.2% respectively. Besides, 4-layer structure heterojunction of low /spl rho/-CuInS/sub 2//high /spl rho/-CuInS/sub 2//high /spl rho/-CdS/low /spl rho/-CdS has been fabricated. Its bast conversion efficiency was 8.25% under the illumination of 100 mW/cm/sup 2/, and its series resistance and lattice mismatch was 4.3 /spl Omega/ and 2.8% respectively.