PL study of (Al,Ga)As epilayers grown on (100), (111)B and vicinal (111)B GaAs substrates

For the first time, we have grown (Al,Ga)As/GaAs epilayers which show some remarkable quantum wire characteristics-red shift as much as 98 meV-on vicinal (111)B GaAs substrate. For comparison, the epilayers were also deposited on (100) and (111)B substrates simultaneously. But the PL results of these three samples are very different-we explained these PL results with a model based on growth dynamics and drew a conclusion that steps on (111)B surface can play a very important role in crystal growth.