Ferromagnetic Phase in Bulk (Cd, Cr)Te Dilute Magnetic Semiconductor

Metallurgical, magnetic and electrical properties of bulk Cr-doped CdTe crystal grown by vertical solidification method are reported. Structural and metallographic investigation showed homogeneous zinc-blende structure with a lattice parameter of about 6.481 Aring. Magnetic measurement showed temperature-induced magnetic phase transition with a Curie temperature ~ 362 K. Resistance with 4 probe method showed highly insulating > 10
⁸
Omega at room temperature. Composition analysis using field emission transmission electron microscopy revealed that it could be composed of locally different Cr-substituted CdTe region depending on Cr content.