New electron range for uniform generation function for semiconductors

In our pervious study [1] (Y. Beggah and A. Lahreche American Journal of Applied Sciences 5(6): 678-682, 2008), we have shown that the EBIC signal can be accurately calculated using simple forms of the carrier generation function if an appropriate electron phenomenological penetration is used. Depending on beam energy, an electron range R
_pho
has been derived for uniform generation form which is usually used in order to model EBIC signal. In the present work, we try to perfect the result for uniform generation function by extending our calculation on the entire range of beam energy and for different diffusion length. Although that the calculation is intended for diodes based on germanium we show that the electron range works very successfully for any other semiconductors; we give examples of silicon and gallium arsenide.