A model for describing the effect of series resistance in pseudo-MOS transistors

This work presents the modeling of drain and source series resistances (R/sub S/ and R/sub D/) effects in MOS transistors, in the linear and saturation regions of operation. The investigation is focused on the saturation regime, where R/sub S/ and R/sub D/ can be determined independently. There are also presented typical values extracted for MOSFET series resistances.