High frequency electrical characteristics of thermally grown SiO/sub 2/ films on <0001> p-type 6H-SiC

This paper presents the high frequency electrical characteristics of SiO/sub 2/ films on p-type 6H-SiC <0001> Si. MOS capacitors were fabricated for this purpose. The oxide was thermally grown in dry conditions as on Si-substrates. The capacitors were characterised to evaluate the quality of the SiO/sub 2/ layer. The experimental C-V characteristics show a hysterisis effect which is more important when the sample is UV light exposed. The dielectric losses and the frequency response have also been analysed.