Transmission electron microscopy and spectroellipsometric investigation of LPCVD polysilicon as-deposited and after hydrogenation

Polycrystalline silicon deposited at 570/spl deg/C and 620/spl deg/C temperature: as-deposited and after hydrogenation was investigated by spectroellipsometry and transmission electron microscopy. The paper also includes the evaluation of crystallinity fraction of polysilicon via Bruggeman-Effective Medium Approximation and the statistical analysis of grain size.