Transport properties of Zn doped CuInSe/sub 2/ single crystals

The results of the transport phenomena measurements on n-CuInSe/sub 2/ are presented. For the first time the transverse Nernst-Ettingshausen (N-E) effect is investigated in the I-III-VI/sub 2/ materials. From the results of thermoelectric power, the Hall coefficient and transverse N-E effect measurements values of the density of states effective mass m* at the temperature range investigated have been calculated.