A new SPICE model for the reverse bias region of a semiconductor diode

The paper presents a new analytical model for the reverse bias region of the current-voltage characteristic of a semiconductor diode. This model has the advantage that a single analytical function is used for modelling both the saturation and the regulation regions of the reverse biased diode. The function takes into account the real dependence of the reverse current I/sub R/ versus the reverse applied voltage V/sub R/ in the transition region (Zener "knee") between the saturation and the regulation regions. This model is useful especially for the diodes having a soft breakdown.