A high efficiency GaAs MCM power amplifier for 1.9 GHz digital cordless telephones

A GaAs MCM power amplifier has been developed for 1.9-GHz digital cordless telephones. Power-added efficiency of 40.2% and P/sub 1dB/ of 22.2 dBm have been obtained at drain supply voltage of 3.6 V. Adoption of the multilayer MCM structure, i.e., multilayer microwave integrated circuits (MuMIC), and on-chip ferroelectric capacitors successfully reduced the GaAs total chip area to be 1.1 mm/sup 2/. We consider that the MuMIC is the most effective candidate for high frequency circuits.