Deep level observation in InP by temperature dependence of the van der Pauw's symmetry factor

Summary form only given. One of the most convenient methods of the basic characterisation of semiconductors is Hall effect measurement by van der Pauw's geometry. As a "by-product" the symmetry factor and a function of the symmetry factor is calculated. In this work we wish to demonstrate that this factor can indicate quite important properties of the sample. Though these properties are connected with inhomogeneities, deep levels can be observed by the temperature dependence of the symmetry factor. Both bulk InP and InP layers on semi-insulating substrates have been studied.