Investigations on low-temperature MOVPE growth of InGaAs/InP using alternative sources (TBAs, TBP)

Summary form only given. A systematic study compares the quality of InP and InGaAs epitaxial layers grown by low-pressure organometallic vapor phase epitaxy (MOVPE) using TMG and TEG trimethylindium (TMIn), phospine (PH3), arsino (AsH/sub 3/) and tertiarybutylophosphine (TBP) and tertriarybutylarsin (TBAs) sources. High quality InP layers are obtained with both phosphorus sources for growth at high V/III ratio and at low temperatures with the TBP, TBAs sources than with the phospine and arsine sources. Excellent morphologies are obtained for the growth of InP between 530 and 590/spl deg/C for TBP. For the first time, V/III ratio as low as 1.3 have been used to grow InP epilayers with featureless morphologies at 500/spl deg/C. The highest room temperature mobilities and lowest electron densities, obtained at 630/spl deg/C, are 3800cm/sup 2//v.sec and 3/spl times/10/sup 15/ cm/sup -3/, respectively. TEGa was applied as a gallium source because of lower decomposition temperature. Thus, the lower growth temperature GaInAs growth (below 600/spl deg/C) could be used to develop device structures.