Photoreflectance study of surface Fermi level of InAlAs after sulphidation

The aim of the present study is to study by the photoreflectance (PR) technique, the influence of sulphidation treatments, which have been successfully applied to the passivation of GaAs surfaces, on the Fermi level pinning of InAlAs. It is of considerable interest since it can give contactless surface Fermi level position through the exploitation of Franz Keldysh oscillations.