High quality InGaAsP/InP multiple quantum well modulator structures for 1.3 and 1.5 /spl mu/m applications

We report on high quality InGaAsP/InP multiple quantum well structures grown by chemical beam epitaxy with absorption at the 1.3 to 1.5 /spl mu/m range. Transmission profiles with remarkable excitonic features and sharply defined absorption edges for p-i-n samples with as many as 200 periods are shown to be achievable. Very sharp satellite peaks with linewidth comparable with that from the substrate are shown in the X-ray diffraction. We use a new method to monitor the substrate temperature which shows excellent results in terms of homogeneity of layer thickness and composition even for structures with a large number of periods.