MOVPE growth of GaAs and InP based compounds in production reactors using TBAs and TBP

For many MOVPE users the decision to switch production completely to TBP and TBAs may still be difficult as long as it is not proven that all III-V materials can be grown with TBAs/TBP in the same class of reactors. The aim of this study is to demonstrate that these precursors can replace arsine and phosphine for the growth of all device structures in the Al-Ga-In-As-P system.