Stress in high rate deposited silicon dioxide films for MCM applications

Thick PECVD silicon dioxide (SiO/sub 2/) films were deposited at 1000 /spl Aring//min in the 250-350/spl deg/C temperature range for multichip module (MCM) applications. A considerable change in the stress values of these films was observed after annealing in the 250-400/spl deg/C range. The stress of as-deposited and annealed films were monitored for two months in a clean room environment. The moisture absorption diffusion coefficients of these high rate deposited films were found to be high. A considerable difference in the stress behavior of unannealed and annealed films was observed during shelf storage. The observed stress behavior is correlated with silanol (SiOH) and SiH content in the films.