MOVPE growth of high performance photodetector structures using TBA and TBP

Tertiary-butyl-arsine (TEA) and tertiary-butyl-phosphine (TBP) are common alternative group V precursors for the replacement of the highly toxic arsine and phosphine. We demonstrate, that high performance devices like pin-photodetectors grown with TBA and TBP show excellent device characteristics. Extremely low dark currents of I/sub D/<100 pA at -5 V are found for 55 /spl mu/m planar pin-photodiodes with an yield of 99%. Also planar 300 /spl mu/m (O) diodes and mesa pin photodetectors (O=40 /spl mu/m) were processed and investigated. In both cases very low dark currents of I/sub D/<0.6 nA at -5 V were measured. Beside safety aspects, the improvements in device properties together with high yields (>95%) demonstrate the suitability of TBA and TBP for the growth of high performance pin-photodetectors.