Growth of InP bulk crystals by VGF: a comparative study of dislocation density and numerical stress analysis

The potential of the VGF process is analysed by using a flat bottom crucible for the growth of InP crystals with 2" diameter. Results of numerical simulations are used to design a set-up which can be run in a LEC facility. The EPD /spl ap/3/spl middot/10/sup 3/ cm/sup -2/ of the grown crystals is in accordance with calculated results based on an analysis of the thermal stress occurring during growth.