Fabrication of Photonic Wire and Crystal Circuits in Silicon-on-Insulator Using 193-nm Optical Lithography

High-index contrast silicon-on-insulator technology enables wavelength-scale compact photonic circuits. We report fabrication of photonic circuits in silicon-on-insulator using complementary metal-oxide-semiconductor processing technology. By switching from advanced optical lithography at 248 to 193 nm, combined with improved dry etching, a substantial improvement in process window, linearity, and proximity effect is achieved. With the developed fabrication process, propagation and bending loss of photonic wires were characterized. Measurements indicate a propagation loss of 2.7 dB/cm for 500-nm photonic wire and an excess bending loss of 0.013 dB/90deg bend of 5-mum radius. Through this paper, we demonstrate the suitability of high resolution optical lithography and dry etch processes for mass production of photonic integrated circuits.