Soft error susceptibility and immune structures in dynamic random access memories (DRAMs) investigated by nuclear microprobes

Soft error susceptibility mapping and ion-beam-induced-current (IBIC) measurements using a nuclear microprobe allow a quantitative evaluation of the charge collection which induces upset in dynamic random access memories (DRAMs). Soft error susceptibility in DRAMs as a function of local position and structure has been reviewed. Charge collection efficiency induced by incident ions on reverse-biased n/sup +/p junctions with various barrier well structures has been compared with that with a conventional well in a p/sup -/ epitaxial layer on a p/sup +/ substrate.