Device simulation of charge collection and single-event upset

In this paper we review the current status of device simulation of ionizing-radiation-induced charge collection and single-event upset (SEU), with an emphasis on significant results of recent years. We present an overview of device-modeling techniques applicable to the SEU problem and the unique challenges this task presents to the device modeler. We examine unloaded simulations of radiation-induced charge collection in simple p/n diodes, SEU in dynamic random access memories (DRAM's), and SEU in static random access memories (SRAM's). We conclude with a few thoughts on future issues likely to confront the SEU device modeler.