Effects of Carbon on Schottky Barrier Heights of NiSi Modified by Dopant Segregation

The presence of carbon at the interface between NiSi and Si has been found to participate in the process of modification of effective Schottky barrier heights using the dopant segregation (DS) method. Carbon alone results in an increased phi
_bn
from 0.7 to above 0.9 eV. Boron diffusion in NiSi is inhibited by carbon, and no B-DS at the NiSi/Si interface occurs below 600degC. Above this temperature, B-DS at this interface is evident thus keeping phi
_bn
high. The presence of interfacial carbon leads to an increased interfacial As concentration resulting in beneficial effects in tuning phi
_bp
above 1.0 eV by As-DS.