Pulse response bistable magneto-impedance effect in amorphous wires

A bistable magneto-impedance (MI) effect has been found in twisted amorphous wires magnetized with a sharp pulse current, in which the induced wire voltage jumps from a higher value to a lower one at some positive critical magnetic field and conversely for a negative field, exhibiting two clearly defined residual states. The bistable MI element has a potential for application in a digital magnetic memory cell of nonvolatile and nondestructive readout for a neural network memory. It can also operate as switch type field sensors such as a sensitive micro-sized proximity sensor. The basic properties of the pulse response bistable MI effect and its analysis based on the hysteresis in an ac rotational permeability are also presented.