Impact of sputter deposited TaN and TiN metal gates on ZrO2/Ge and ZrO2/Si high-k dielectric gate stacks

We investigated the impact of rf-magnetron sputter deposited TaN and TiN gate electrodes on high-k metal gate stacks to be applied in future CMOS technology. As substrate materials germanium and silicon were studied. The effective work function for TiN and TaN films on ZrO
₂
//Si was determined to be 4.6 eV in case of TaN, and 4.5 eV in case of TiN. Thermal stability of the final gate stacks was given upon annealing to temperatures of 500degC.