Development silicon of nanotechnology and technology of plasma etching silicon

The analysis of prospects of development nanoelectronics and silicon nanotechnology is carried out. The information on a condition of works on manufacturing integrated microcircuits on technological norms 32, 45, 51, 55 and 60 nm is resulted. The basic results of plasma etching of silicon in CCl
2
F
2
/O
2
in quartz reactor with teflon polymer by a covering are considered. The model of plasma chemical of etching of silicon in plasma CCl
2
F
2
/O
2
in conditions of active delivery CAP is constructed at the expense of etching of teflon polymer.