Alpha particle simulation of space radiation damage effects in semiconductor devices

We describe a method that uses an /sup 241/Am alpha particle source to simulate effects of space radiation damage to semiconductor devices. By applying a unique combination of analytic and numerical techniques to data obtained from alpha irradiation experiments, device response to protons and other radiation types can be predicted. The techniques enable the interpretation of the alpha data by deriving the damage-depth profiles for both ionizing and nonionizing damage in InP devices. The results agree well when compared to the results from proton and electron irradiation of the same type of devices.