Design, simulation, and realization of solid state memory element using the weakly coupled GMR effect

We found that in a weakly coupled giant magnetoresistive (GMR) sandwich the small-field response's slope is dependent on its past magnetic history. Based on this storage mechanism, we designed a binary solid state memory element. Simulation results show that it operates on the general principle of storing a binary digit in the hard component and sensing nondestructively its remanent state by switching the soft component in such a way that the magnetic state of the hard component is unaltered, thereby causing a dramatic GMR polar readout. So far a 1-b experimental apparatus has been realized.