Extraction method of the base series resistances in bipolar transistor in presence of current crowding

This paper proposes a new method to determine the base resistance components and the base sheet resistance under forward bias conditions and in the presence of current crowding. Using bipolar transistors with two independent base contacts, the base sheet resistance R/sub /spl square// and the extrinsic resistance component R/sub Bx/ are first extracted. Accounting for current crowding, the total base resistance is subsequently calculated using an analytical analysis of the debiasing effects. The assessment of this method is accomplished by exercising the algorithm with current/voltage data generated by two dimensional numerical simulations. The simulated structure corresponds to an advanced npn transistor embedded in the QUBiC BiCMOS technology. The extracted quantities are directly compared to their strictly integrated counterparts determined from the internal current and voltage distributions.