Two-dimensionally confined injection phenomena at low temperatures in sub-10-nm-thick SOI insulated-gate p-n-junction devices

This paper describes two-dimensionally confined carrier injection phenomena in thin-SOI insulated-gate pn-junction devices fabricated on SIMOX substrates. At 28 K conductance shows step-like anomalies due to the manifestation of a two-dimensional subband system in an 8-nm-thick-SOI structure at a low gate bias. Conductance shows an oscillation-like feature at a high gate bias because of the injection mode change. These effects are examined by theoretical simulations based on quantum mechanics.