A high-performance lateral PNP transistor structure

This paper proposes a novel lateral PNP-type structure that is fully compatible with existing single-polysilicon BiCMOS processes and offers a valid alternative to shallow polysilicon emitter transistors. We have used both an analytical approach and a more accurate computer-aided design, obtaining 0.9 GHz and 4.4 GHz cutoff frequency for 2 /spl mu/m and 0.8 /spl mu/m minimum feature transistors, respectively.