The influence of Ge-implantation on the electrical characteristics of the ultra-shallow junction formed by using silicide as a diffusion source

The electrical characteristics of ultra-shallow p/sup +//n junctions formed by implanting a 60 keV Ge/sup +/ into a TiSi/sub 2/ layer have been studied. A very low reverse leakage current density (/spl cong/0.4 nA/cm/sup 2/ at -5 V) and a very good forward ideality factor n (/spl cong/1.001) were achieved in these ultra-shallow p/sup +//n junctions. From the secondary ion mass spectrometry (SIMS) analysis, the junction depth was measured to be 600 /spl Aring/ and the surface concentration was about 3 times higher than that of the conventional samples.