Low threshold 1.3 /spl mu/m-GaInAsP/InP tensile-strained quantum well lasers with buried heterostructure

Semiconductor lasers emitting at 1.3 /spl mu/m are important light sources for optical communication systems. We previously reported on 1.3 /spl mu/m GaInAsP-InP tensile-strained QW lasers emitting at 1.3 /spl mu/m with low threshold current density. In this paper, we report low threshold buried heterostructure (BH) lasers.