Temperature dependence of short wavelength GaInP/AlGaInP DFB lasers

Distributed feedback (DFB) lasers in the visible wavelength range are of great interest for the application as single-mode light sources for optical memories, for atomic absorption spectroscopy and as master oscillators in high power and spectrally coherent master oscillator power amplifier systems. In all these cases stable single mode emission and low temperature sensitivity are most important. We report on the fabrication and lasing characteristics of first order GaInP/AlGaInP DFB lasers. The lasers were fabricated in a two-step low-pressure metallorganic vapour-phase-epitaxy (MOVPE) process, interrupted by the formation of the DFB gratings. The definition of the gratings (periods between 105 nm and 110 nm, spacing 0.5 nm) was done by electron beam lithography, followed by a low-damage RIE-ECR dry etching process.