Fully Depleted UTB and Trigate N-Channel MOSFETs Featuring Low-Temperature PtSi Schottky-Barrier Contacts With Dopant Segregation

Schottky-barrier source/drain (SB-S/D) presents a promising solution to reducing parasitic resistance for device architectures such as fully depleted UTB, trigate, or FinFET. In this letter, a low-temperature process (< 700degC) with PtSi-based S/D is examined for the fabrication of n-type UTB and trigate FETs on SOI substrate (t
_Si
= 30 nm). Dopant segregation with As was used to achieve the n-type behavior at implantation doses of 1 ldr 10
¹⁵
and 5 ldr 10
¹⁵
cm
^-2
. Similar results were found for UTB devices with both doses, but trigate devices with the larger dose exhibited higher on currents and smaller process variation than their lower dose counterparts.