Rad-hard successive detection microwave logarithmic amplifiers employing GaAs monolithic chips using heterojunction bipolar transistors

A successive detection monolithic amplifier was subjected to Co/sub 60/ radiation in steps at 1 rad/sec silicon to a total dose of 10/sup 6/ rad silicon. This paper shows the test results indicating that only 1.0-2.1% change in the linearity bias point and a 0.1 dB change in the compressed RF output power occurred.